Tokyo Electron Limited

Qi Wang

Sergey Alexandrovich Voronin

Shyam Sridhar

Nathaniel C Cady

Karsten Beckmann

Martin Rodgers

The performance of a ReRAM structure may be stabilized by utilizing a dry chemical gas removal (or cleaning) process to remove sidewall residue and/or etch by-products after etching the ReRAM stack layers. The dry chemical gas removal process decreases undesirable changes in the ReRAM forming voltage that may result from such sidewall residue and/or etch by-products. Specifically, the dry chemical gas removal process may reduce the ReRAM forming voltage that may otherwise result in a ReRAM structure that has the sidewall residue and/or etch by-products. In one embodiment, the dry chemical gas removal process may comprise utilizing a combination of HF and NHgases. The dry chemical gas removal process utilizing HF and NHgases may be particularly suited for removing halogen containing sidewall residue and/or etch by-products.

Growing community of inventors

Albany, NY, United States of America

Qi Wang