The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Sep. 21, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsung-Fu Tsai, Changhua County, TW;

Ying-Ching Shih, Hsinchu City, TW;

Szu-Wei Lu, Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 70/685 (2026.01); H10W 70/00 (2026.01); H10W 70/60 (2026.01); H10W 70/63 (2026.01); H10W 70/652 (2026.01); H10W 70/66 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 74/01 (2026.01); H10W 74/15 (2026.01); H10W 90/00 (2026.01); H10W 90/22 (2026.01); H10W 99/00 (2026.01);
U.S. Cl.
CPC ...
H10W 70/685 (2026.01); H10W 70/611 (2026.01); H10W 70/635 (2026.01); H10W 70/66 (2026.01); H10W 90/00 (2026.01); H10W 70/099 (2026.01); H10W 70/60 (2026.01); H10W 70/6528 (2026.01); H10W 72/072 (2026.01); H10W 72/07207 (2026.01); H10W 72/07236 (2026.01); H10W 72/07255 (2026.01); H10W 72/073 (2026.01); H10W 72/252 (2026.01); H10W 72/2528 (2026.01); H10W 72/853 (2026.01); H10W 74/019 (2026.01); H10W 74/15 (2026.01); H10W 90/22 (2026.01); H10W 90/722 (2026.01); H10W 90/724 (2026.01); H10W 90/732 (2026.01); H10W 90/734 (2026.01); H10W 99/00 (2026.01);
Abstract

A package structure includes a semiconductor die, a first insulating encapsulant, a plurality of first conductive features, an interconnect structure and bump structures. The semiconductor die includes a plurality of conductive pillars made of a first material. The first insulating encapsulant is encapsulating the semiconductor die. The first conductive features are disposed on the semiconductor die and electrically connected to the conductive pillars. The first conductive features include at least a second material different from the first material. The interconnect structure is disposed on the first conductive features, wherein the interconnect structure includes a plurality of connection structures made of the second material. The bump structures are electrically connecting the first conductive features to the connection structures, wherein the bump structures include a third material different from the first material and the second material.


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