The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jan. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Der-Chyang Yeh, Hsinchu, TW;

Kuo-Chiang Ting, Hsinchu, TW;

Yu-Hsiung Wang, Zhubei, TW;

Chao-Wen Shih, Zhubei, TW;

Sung-Feng Yeh, Taipei, TW;

Ta Hao Sung, Hsinchu, TW;

Cheng-Wei Huang, Hsinchu, TW;

Yen-Ping Wang, Hemei Township, TW;

Chang-Wen Huang, Hsinchu, TW;

Sheng-Ta Lin, Gongguan Township, TW;

Li-Cheng Hu, Hsinchu, TW;

Gao-Long Wu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 42/00 (2026.01); H10W 20/20 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01);
U.S. Cl.
CPC ...
H10W 42/121 (2026.01); H10W 20/20 (2026.01); H10W 42/00 (2026.01); H10W 74/016 (2026.01); H10W 74/134 (2026.01);
Abstract

Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.


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