Gongguan, China

Sheng-Ta Lin

This inventor holds 1 USPTO granted patent and 5 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng-Ta Lin. Retrieved from https://idiyas.com/inventor/sheng-ta-lin-p9aeyr5w

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Sheng-Ta Lin

Introduction: Sheng-Ta Lin is a notable inventor based in Gongguan, China. He has made significant contributions to the field of integrated circuit technology. His work focuses on enhancing the reliability and performance of integrated circuit packages.

Latest Patents: Sheng-Ta Lin holds a patent for "Integrated circuit packages and methods of forming the same." This patent includes a crack stopper structure surrounding an embedded integrated circuit die. The formation of this structure involves multiple layers separated by a fill layer. The layers of the crack stopper may consist of several sublayers, with some providing adhesion, hardness buffering, and material gradients for transitioning between layers.

Career Highlights: Sheng-Ta Lin is associated with Taiwan Semiconductor Manufacturing Co., Ltd., a leading company in the semiconductor industry. His expertise in integrated circuit technology has positioned him as a valuable asset in his field.

Collaborations: He has worked alongside notable colleagues such as Der-Chyang Yeh and Kuo-Chiang Ting, contributing to advancements in semiconductor technology.

Conclusion: Sheng-Ta Lin's innovative work in integrated circuit packages showcases his dedication to improving technology in the semiconductor industry. His contributions are vital for the ongoing development of reliable electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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