The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Jul. 02, 2024
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Adel A. Elsherbini, Chandler, AZ (US);

Krishna Bharath, Phoenix, AZ (US);

Kevin P. O'brien, Portland, OR (US);

Kimin Jun, Portland, OR (US);

Han Wui Then, Portland, OR (US);

Mohammad Enamul Kabir, Portland, OR (US);

Gerald S. Pasdast, San Jose, CA (US);

Feras Eid, Chandler, AZ (US);

Aleksandar Aleksov, Chandler, AZ (US);

Johanna M. Swan, Scottsdale, AZ (US);

Shawna M. Liff, Scottsdale, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/20 (2025.01); H10W 72/30 (2026.01); H10W 72/90 (2026.01); H10W 80/00 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10D 1/20 (2025.01); H10W 90/00 (2026.01); H10W 72/353 (2026.01); H10W 72/923 (2026.01); H10W 72/926 (2026.01); H10W 72/936 (2026.01); H10W 72/952 (2026.01); H10W 72/957 (2026.01); H10W 80/721 (2026.01); H10W 80/732 (2026.01); H10W 80/754 (2026.01); H10W 90/732 (2026.01); H10W 90/792 (2026.01);
Abstract

Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.


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