The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Feb. 25, 2022
Lam Research Corporation, Fremont, CA (US);
Beibei Jiang, Alpharatte, GA (US);
Taner Ozel, Fremont, CA (US);
Chen Chen, Hayward, CA (US);
Shuang Pi, Fremont, CA (US);
Daksh Agarwal, Sunnyvale, CA (US);
Qing Xu, Fremont, CA (US);
Merrett Wong, San Carlos, CA (US);
Amit Mukhopadhyay, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for controlling a critical dimension of a mask layer is described. The method includes receiving a first primary parameter level, a second primary parameter level, a first secondary parameter level, a second secondary parameter level, and a third secondary parameter level. The method also includes generating a primary signal having the first primary parameter level, and transitioning the primary signal from the first primary parameter level to the second primary parameter level. The method further includes generating a secondary radio frequency (RF) signal having the first secondary parameter level, and transitioning the secondary RF signal from the first secondary parameter level to the second secondary parameter level. The method includes transitioning the secondary RF signal from the second secondary parameter level to the third secondary parameter level.