The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Sep. 29, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shinya Ishikawa, Miyagi, JP;

Kenta Ono, Miyagi, JP;

Masanobu Honda, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/00 (2026.01); H01J 37/32 (2006.01); H10P 50/28 (2026.01); H10P 72/00 (2026.01); H10P 74/20 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
H10P 50/73 (2026.01); H01J 37/32899 (2013.01); H10P 50/283 (2026.01); H10P 50/287 (2026.01); H10P 72/0421 (2026.01); H10P 74/203 (2026.01); H10P 76/405 (2026.01); H10P 76/4085 (2026.01); H01J 2237/3341 (2013.01);
Abstract

A substrate processing method according to the present disclosure includes: preparing a substrate having (a) an etching film, (b) a mask film formed on the etching film and having a sidewall that defines an opening on the etching film, and (c) a protective film formed to surround the opening on the sidewall of the mask film and containing an element selected from the group consisting of boron, phosphorus, sulfur, and tin; and etching the etching film by using the protective film and the mask film as a mask.


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