The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jun. 06, 2023
United Microelectronics Corp., Hsin-Chu, TW;
Ya-Ting Hu, Kaohsiung City, TW;
Chih-Yi Wang, Tainan City, TW;
Yao-Jhan Wang, Tainan City, TW;
Wei-Che Chen, Kaohsiung City, TW;
Kun-Szu Tseng, Tainan City, TW;
Yun-Yang He, Changhua County, TW;
Wen-Liang Huang, Hsinchu City, TW;
Lung-En Kuo, Tainan City, TW;
PO-Tsang Chen, Tainan City, TW;
PO-Chang Lin, Tainan City, TW;
Ying-Hsien Chen, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A semiconductor device includes a substrate with a high voltage region and a low voltage region. A first deep trench isolation is disposed within the high voltage region. The first deep trench isolation includes a first deep trench and a first insulating layer filling the first deep trench. The first deep trench includes a first sidewall and a second sidewall facing the first sidewall. The first sidewall is formed by a first plane and a second plane. The edge of the first plane connects to the edge of the second plane. The slope of the first plane is different from the slope of the second plane.