The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Apr. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kai-Fung Chang, Taipei City, TW;

Chin-Wei Liang, Zhubei City, TW;

Sheng-Feng Weng, Taichung City, TW;

Ming-Yu Yen, Miaoli County, TW;

Cheyu Liu, Hsinchu County, TW;

Hung-Chih Chen, Hsinchu City, TW;

Yi-Yang Lei, Taichung, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 70/05 (2026.01); H10W 70/60 (2026.01); H10W 70/69 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 70/093 (2026.01); H10W 70/095 (2026.01); H10W 70/611 (2026.01); H10W 70/69 (2026.01); H10W 74/016 (2026.01); H10W 74/117 (2026.01); H10W 74/121 (2026.01); H10W 90/00 (2026.01); H10W 90/401 (2026.01); H10W 90/701 (2026.01); H10W 70/60 (2026.01); H10W 90/722 (2026.01);
Abstract

Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.


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