The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Feb. 08, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Ming Weng, Taichung City, TW;

Tzu-Sung Huang, Tainan City, TW;

Wei-Kang Hsieh, Tainan City, TW;

Hao-Yi Tsai, Hsinchu City, TW;

Ming-Hung Tseng, Miaoli County, TW;

Tsung-Hsien Chiang, Hsinchu, TW;

Yen-Liang Lin, Taichung City, TW;

Chu-Chun Chueh, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 46/00 (2026.01); H10W 70/05 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01); H10W 70/00 (2026.01); H10W 70/652 (2026.01); H10W 70/685 (2026.01); H10W 72/00 (2026.01);
U.S. Cl.
CPC ...
H10W 70/65 (2026.01); H10W 46/00 (2026.01); H10W 70/05 (2026.01); H10W 74/019 (2026.01); H10W 74/117 (2026.01); H10W 90/00 (2026.01); H10W 46/401 (2026.01); H10W 70/093 (2026.01); H10W 70/099 (2026.01); H10W 70/6528 (2026.01); H10W 70/685 (2026.01); H10W 72/073 (2026.01); H10W 72/07307 (2026.01); H10W 72/874 (2026.01); H10W 90/734 (2026.01);
Abstract

An integrated fan-out package includes a first redistribution structure, a die, conductive structures, an encapsulant, and a second redistribution structure. The first redistribution structure has first regions and a second region surrounding the first regions. A metal density in the first regions is smaller than a metal density in the second region. The die is disposed over the first redistribution structure. The conductive structures are disposed on the first redistribution structure to surround the die. Vertical projections of the conductive structures onto the first redistribution structure fall within the first regions of the first redistribution structure. The encapsulant encapsulates the die and the conductive structures. The second redistribution structure is disposed on the encapsulant, the die, and the conductive structures.


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