The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Oct. 30, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Che Hsieh, Taipei, TW;
Tzu-Yi Wang, Hsinchu City, TW;
Ping-Hsun Lin, New Taipei City, TW;
Ta-Cheng Lien, Cyonglin Township, TW;
Hsin-Chang Lee, Hsinchu County, TW;
Huan-Ling Lee, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.