The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Dec. 30, 2022
Production solutions for high-throughput/precision xps metrology using unsupervised machine learning
Nova Measuring Instruments Inc., Fremont, CA (US);
Heath Pois, Fremont, CA (US);
Dmitry Kislitsyn, Fremont, CA (US);
Mark Klare, Poughkeepsie, NY (US);
Paul Isbester, Fremont, CA (US);
Daniel Kandel, Rehovot, IL;
Michal Haim Yachini, Rehovot, IL;
NOVA MEASURING INSTRUMENTS INC., Fremont, CA (US);
Abstract
Determining process excursions in a semiconductor processing using unsupervised machine learning on photoelectron emission dataset obtained by XPS or XRF tool. Principal component analysis is applied to the emission dataset and the variances of each principal component is analyzed to thereby select a number of N principal components whose variance is the highest. All data points of the dataset which do not correspond to any of the N principal components are removed from the dataset to obtain a filtered dataset. An emission intensity is then calculated from the filtered dataset and is plotted on a SPC chart to inspect for excursions.