The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Feb. 01, 2022
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Kazunori Shinoda, Tokyo, JP;

Hirotaka Hamamura, Tokyo, JP;

Kenji Maeda, Tokyo, JP;

Kenetsu Yokogawa, Tokyo, JP;

Thi-Thuy-Nga Nguyen, Aichi, JP;

Kenji Ishikawa, Aichi, JP;

Masaru Hori, Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/24 (2026.01); H10P 50/20 (2026.01); H10P 50/26 (2026.01);
U.S. Cl.
CPC ...
H10P 50/242 (2026.01); H10P 50/20 (2026.01); H10P 50/24 (2026.01); H10P 50/264 (2026.01);
Abstract

An etching technology with high uniformity of the amount of etching and improved yields of etching treatment is provided. An etching method for etching a film layer to be treated including SiGe placed on a surface of a wafer, includes: a step of forming a reaction layer including nitrogen-hydrogen bond on a surface of the film layer by supplying reactive particles including fluorine, hydrogen, and nitrogen to the surface of the film layer; and a step of heating the film layer to desorb the reaction layer.


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