The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
May. 19, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsin-Chang Lee, Hsinchu, TW;
Pei-Cheng Hsu, Hsinchu, TW;
Wei-Hao Lee, Hsinchu, TW;
Ping-Hsun Lin, Hsinchu, TW;
Ta-Cheng Lien, Hsinchu, TW;
Ching-Fang Yu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.