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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12635495 B1

PDFFull Text
Date of Patent:
May. 19, 2026

Filed:

Mar. 24, 2021

Patterning material including carbon-containing layer and method for semiconductor device fabrication

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Szu-Ping Tung, Taipei, TW;

Chun-Kai Chen, Kaohsiung, TW;

Tze-Liang Lee, Hsinchu, TW;

Yi-Nien Su, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Sue A Purvis

Assistant Examiner:

Aneta B Cieslewicz

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/02115 (2013.01); H01L 21/02266 (2013.01); H01L 21/02271 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31144 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 2221/101 (2013.01);
Abstract

In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition having a composition including at least 50 atomic percentage carbon; depositing a second layer including silicon; and depositing a photosensitive layer on the second layer. In some implementations, the first layer is deposited by ALD, CVD, or PVD processes.

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