The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Oct. 27, 2021
Via opening rectification using lamellar triblock copolymer, polymer nanocomposite, or mixed epitaxy
Intel Corporation, Santa Clara, CA (US);
Gurpreet Singh, Portland, OR (US);
Florian Gstrein, Portland, OR (US);
Eungnak Han, Portland, OR (US);
Marie Krysak, Portland, OR (US);
Tayseer Mahdi, Beaverton, OR (US);
Xuanxuan Chen, Hillsboro, OR (US);
Brandon Jay Holybee, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Methods for forming via openings by using a lamellar triblock copolymer, a polymer nanocomposite, and a mixed epitaxy approach are disclosed. An example method includes forming a guiding pattern (e.g., a topographical guiding pattern, chemical guiding pattern, or mixed guiding pattern) on a surface of a layer of an IC device, forming lamellar structures based on the guiding pattern by using the lamellar triblock copolymer or forming cylindrical structures based on the guiding pattern by using the polymer nanocomposite, and forming via openings by removing a lamella from each of at least some of the lamellar structures or removing a nanoparticle from each of at least some of the cylindrical structures.