The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Oct. 13, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akira Nakagawa, Miyagi, JP;

Kenji Komatsu, Miyagi, JP;

Kazuma Kamimura, Miyagi, JP;

Tsukasa Hirayama, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/32357 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01); H01J 2237/334 (2013.01);
Abstract

A substrate etching method performed by using a plasma processing apparatus includes: providing a substrate including a silicon-containing film to a substrate support; periodically supplying, to the substrate support, bias RF power of 20 KW to 50 kW at a duty ratio of 5% to 50%; and etching the silicon-containing film by plasma generated from a processing gas containing a fluorocarbon gas and an oxygen-containing gas.


Find Patent Forward Citations

Nakagawa, Akira. (2026). Etching method and plasma processing apparatus (U.S. Patent No. 12603254). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12603254

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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