The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Sep. 25, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kevin Cook, Portland, OR (US);

Anand S. Murthy, Portland, OR (US);

Gilbert Dewey, Beaverton, OR (US);

Nazila Haratipour, Hillsboro, OR (US);

Chi-Hing Choi, Portland, OR (US);

Jitendra Kumar Jha, Hillsboro, OR (US);

Srijit Mukherjee, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/6219 (2025.01); H10D 64/62 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01);
Abstract

Embodiments disclosed herein include complementary metal-oxide-semiconductor (CMOS) devices and methods of making such devices. In an embodiment, a CMOS device comprises a first transistor with a first conductivity type, where the first transistor comprises a first source region and a first drain region, and a first interface material over the first source region and the first drain region. In an embodiment, the CMOS device further comprises a second transistor with a second conductivity type that is opposite form the first conductivity type, where the second transistor comprises a second source region and a second drain region, and a second interface material over the second source region and the second drain region.


Find Patent Forward Citations

Loading…