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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12588495 B1

PDFFull Text
Date of Patent:
Mar. 24, 2026

Filed:

Feb. 17, 2022

Bonding alignment marks at bonding interface

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Meng Yan, Wuhan, CN;

Jia Wen Wang, Wuhan, CN;

Si Ping Hu, Wuhan, CN;

Shun Hu, Wuhan, CN;

Assignee:

YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;

Attorney:

BAYES PLLC

Primary Examiner:

Brigitte A Paterson

Int. Cl.
CPC ...
H01L 23/528 (2006.01); G03F 9/00 (2006.01); H01L 23/00 (2006.01); H01L 23/544 (2006.01); H01L 25/065 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); G03F 9/7049 (2013.01); G03F 9/7088 (2013.01); G03F 9/7092 (2013.01); H01L 23/544 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H10B 43/50 (2023.02); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/04 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/8013 (2013.01); H01L 2224/80132 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80905 (2013.01); H01L 2224/80908 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06565 (2013.01);
Abstract

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a bonded structure includes a first bonding layer including a first bonding contact and a first bonding alignment mark, a second bonding layer including a second bonding contact and a second bonding alignment mark, and a bonding interface between the first bonding layer and the second bonding layer. The first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface. The first bonding alignment mark includes a plurality of first repetitive patterns. The second bonding alignment mark includes a plurality of second repetitive patterns different from the plurality of first repetitive patterns.

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