The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Jul. 15, 2024
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tai-Yu Chen, Hsinchu, TW;
Shang-Chieh Chien, Hsinchu, TW;
Sheng-Kang Yu, Hsinchu, TW;
Li-Jui Chen, Hsinchu, TW;
Heng-Hsin Liu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 20/00 (2019.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); G03F 7/70025 (2013.01); G03F 7/709 (2013.01); G06N 20/00 (2019.01);
Abstract
An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.