The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Feb. 24, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Mohan Prashanth Javare Gowda, Ottobrunn, DE;

Stephan Stoeckl, Schwandorf, DE;

Sonja Koller, Bavaria, DE;

Wolfgang Molzer, Ottobrunn, DE;

Thomas Wagner, Regelsbach, DE;

Pouya Talebbeydokhti, Gilbert, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49866 (2013.01); H01L 23/552 (2013.01);
Abstract

Embodiments of a microelectronic assembly include a package substrate comprising: a first layer comprising a first plurality of mutually parallel channels of a first material; a second layer comprising columns of the first material; and a third layer comprising a second plurality of mutually parallel channels of the first material, the second plurality of mutually parallel channels being orthogonal to the first plurality of mutually parallel channels. The second layer is between the first layer and the third layer, at least some columns extend between and contact the first plurality of mutually parallel channels and the second plurality of mutually parallel channels, and at least a portion of the first layer, the second layer and the third layer comprises a second material different from the first material.


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