The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Jun. 22, 2021
Applicants:

Applied Materials, Inc., Santa Clara, CA (US);

National University of Singapore, Singapore, SG;

Inventors:

Chandan Kr Barik, Singapore, SG;

Doreen Wei Ying Yong, Singapore, SG;

John Sudijono, Singapore, SG;

Cong Trinh, Santa Clara, CA (US);

Bhaskar Jyoti Bhuyan, San Jose, CA (US);

Michael Haverty, Mountain View, CA (US);

Muthukumar Kaliappan, Fremont, CA (US);

Yingqian Chen, Singapore, SG;

Anil Kumar Tummanapelli, Singapore, SG;

Richard Ming Wah Wong, Singapore, SG;

Assignees:

Applied Materials, Inc., Santa Clara, CA (US);

National University of Singapore, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02208 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/45553 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01);
Abstract

Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.


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