The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Jun. 13, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Liang Lin, Hsinchu, TW;

PO-Hao Tsai, Taoyuan, TW;

PO-Yao Chuang, Hsin-Chu, TW;

Yi-Wen Wu, New Taipei, TW;

Techi Wong, Zhubei, TW;

Shin-Puu Jeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/24 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01); H01L 25/16 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3185 (2013.01); H01L 21/4853 (2013.01); H01L 21/56 (2013.01); H01L 23/24 (2013.01); H01L 23/3107 (2013.01); H01L 23/49811 (2013.01); H01L 24/16 (2013.01); H01L 25/0657 (2013.01); H01L 25/16 (2013.01); H01L 25/18 (2013.01); H01L 23/49822 (2013.01); H01L 2224/16225 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06572 (2013.01); H01L 2924/19106 (2013.01);
Abstract

A package structure is provided. The package structure includes a redistribution structure, and the redistribution structure has multiple insulating layers and multiple conductive features. The package structure also includes a semiconductor die and a device element over opposite surfaces of the redistribution structure. The package structure further includes a first protective layer at least partially surrounding the semiconductor die. In addition, the package structure includes a second protective layer at least partially surrounding the device element. The second protective layer is thicker than the first protective layer, and the second protective layer and the first protective layer have different coefficients of thermal expansion.


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