The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Jun. 17, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

I-Nan. Chen, Taipei, TW;

Kuo-Ming Wu, Zhubei, TW;

Ming-Che Lee, Tainan, TW;

Hau-Yi Hsiao, Chiayi, TW;

Yung-Lung Lin, Taichung, TW;

Che Wei Yang, New Taipei, TW;

Sheng-Chau Chen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G05B 19/416 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); G05B 19/416 (2013.01); H01L 21/31053 (2013.01); G05B 2219/45232 (2013.01);
Abstract

Some implementations described herein provide techniques and apparatuses for polishing a perimeter region of a semiconductor substrate so that a roll-off profile at or near the perimeter region of the semiconductor substrate satisfies a threshold. The described implementations include depositing a first layer of a first oxide material across the semiconductor substrate followed by depositing a second layer of a second oxide material over the first layer of the first oxide material and around a perimeter region of the semiconductor substrate. The described implementations further include polishing the second layer of the second oxide material over the perimeter region using a chemical mechanical planarization tool including one or more ring-shaped polishing pads oriented vertically over the perimeter region.


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