The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Feb. 19, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Shao-Kuan Lee, Kaohsiung, TW;
Hai-Ching Chen, Hsinchu, TW;
Hsin-Yen Huang, New Taipei, TW;
Shau-Lin Shue, Hsinchu, TW;
Cheng-Chin Lee, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76802 (2013.01); H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/53295 (2013.01);
Abstract
A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.