The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Aug. 24, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tseng Hsing Lin, Hsinchu, TW;
Chien-Hsun Lee, Hsin-chu County, TW;
Tsung-Ding Wang, Tainan, TW;
Jung-Wei Cheng, Hsinchu, TW;
Hao-Cheng Hou, Hsinchu, TW;
Sheng-Chi Lin, Yilan County, TW;
Jeng-An Wang, Hsinchu, TW;
Yao-Cheng Wu, Changhua County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A first polymer layer is formed across a package region and a test region. A first metal pattern is formed in the package region and a first test pattern is simultaneously formed in the test region. The first metal pattern has an upper portion located on the first polymer layer and a lower portion penetrating through the first polymer layer, and the first test pattern is located on the first polymer layer and has a first opening exposing the first polymer layer. A second polymer layer is formed on the first metal pattern in the package region and a second test pattern is simultaneously formed on the first test pattern in the test region. The second polymer layer has a second opening exposing the upper portion of the first metal pattern, and the second test pattern has a third opening greater than the first opening of the first test pattern.