The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Mar. 22, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Mao-Yen Chang, Kaohsiung, TW;

Yu-Chia Lai, Zhunan Township, TW;

Kuo-Lung Pan, Hsinchu, TW;

Cheng-Shiuan Wong, Hsinchu, TW;

Hsiu-Jen Lin, Zhubei, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/568 (2013.01); H01L 21/6836 (2013.01); H01L 24/16 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/81 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/2105 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73267 (2013.01);
Abstract

A method includes forming a reconstructed wafer, which includes placing a plurality of device dies over a carrier, encapsulating the plurality of device dies in an encapsulant, and forming a redistribution structure over the plurality of device dies and the encapsulant. The redistribution structure includes a plurality of dielectric layers and a plurality of redistribution lines in the plurality of dielectric layers. The method further includes performing a trimming process on the reconstructed wafer. The trimming process forms a round edge for the reconstructed wafer. A sawing process is performed on the reconstructed wafer, so that the reconstructed wafer includes straight edges.


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