The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Jun. 29, 2021
Tokyo Electron Limited, Tokyo, JP;
Masahiro Tabata, Miyagi, JP;
Toru Hisamatsu, Miyagi, JP;
Yoshihide Kihara, Miyagi, JP;
Masanobu Honda, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
In an embodiment, in the method for processing a workpiece including an etching target layer containing silicon oxide, a mask provided on the etching target layer, and an opening provided in the mask and exposing the etching target layer, according to the embodiment, the etching target layer is etched by removing the etching target layer for each atomic layer through repetitive execution of a sequence of generating plasma of a first processing gas containing nitrogen, forming a mixed layer containing ions included in the plasma on an atomic layer on an exposed surface of the etching target layer, generating plasma of a second processing gas containing fluorine, and removing the mixed layer by radicals included in the plasma. The plasma of the second processing gas contains the radicals that remove the mixed layer containing silicon nitride.