The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Sep. 29, 2022
Applicant:

Stats Chippac Pte. Ltd., Singapore, SG;

Inventors:

Yaojian Lin, Singapore, SG;

Pandi C. Marimuthu, Singapore, SG;

Il Kwon Shim, Singapore, SG;

Byung Joon Han, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01); H10D 84/01 (2025.01); H10D 89/00 (2025.01);
U.S. Cl.
CPC ...
H01L 24/96 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 24/11 (2013.01); H01L 24/19 (2013.01); H01L 24/97 (2013.01); H10D 84/01 (2025.01); H10D 89/011 (2025.01); H10D 89/013 (2025.01); H10D 89/015 (2025.01); H01L 2224/04105 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/10157 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device includes a semiconductor die and an encapsulant deposited over and around the semiconductor die. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. A groove is formed in the base semiconductor material. The semiconductor wafer is singulated through the groove to separate the semiconductor die. The semiconductor die are disposed over a carrier with a distance of 500 micrometers (μm) or less between semiconductor die. The encapsulant covers a sidewall of the semiconductor die. A fan-in interconnect structure is formed over the semiconductor die while the encapsulant remains devoid of the fan-in interconnect structure. A portion of the encapsulant is removed from a non-active surface of the semiconductor die. The device is singulated through the encapsulant while leaving encapsulant disposed covering a sidewall of the semiconductor die. The encapsulant covering the sidewall includes a thickness of 50 μm or less.


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