The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jul. 19, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Hung-Jui Kuo, Hsinchu, TW;

Hui-Jung Tsai, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/538 (2006.01); H01L 21/027 (2006.01); H01L 21/441 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4846 (2013.01); H01L 23/3114 (2013.01); H01L 23/498 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/97 (2013.01); H01L 21/0274 (2013.01); H01L 21/441 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/76819 (2013.01); H01L 21/76885 (2013.01); H01L 23/49811 (2013.01); H01L 23/5384 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/20 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/92244 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/1531 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01);
Abstract

A method embodiment includes forming a patterned first photo resist over a seed layer. A first opening in the patterned first photo resist exposes the seed layer. The method further includes plating a first conductive material in the first opening on the seed layer, removing the patterned first photo resist, and after removing the patterned first photo resist, forming a patterned second photo resist over the first conductive material. A second opening in the patterned second photo resist exposes a portion of the first conductive material. The method further includes plating a second conductive material in the second opening on the first conductive material, removing the patterned second photo resist, and after removing the patterned second photo resist, depositing a dielectric layer around the first conductive material and the second conductive material.


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