Gate cut structures

Abstract

Techniques are provided herein to form semiconductor devices having gate cut structures. Adjacent semiconductor devices having semiconductor regions (e.g., fins or nanoribbons) extending in a first direction have a gate structure that extends over the semiconductor regions in a second direction and are separated by a gate cut structure extending in the first direction and interrupting the gate structure. The gate cut structure further extends between adjacent source or drain regions (corresponding to the adjacent semiconductor devices). A dielectric liner on at least a sidewall and/or top surface of the source or drain regions and also extends up a sidewall surface of the gate cut structure. In some cases, the gate structure includes a gate dielectric present on the semiconductor regions, but not present on the gate cut structure. A contact may pass through the liner and at least partially land on a source or drain region.