The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Aug. 11, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Hung Tsai, Hsinchu, TW;
Xi-Zong Chen, Hsinchu, TW;
Hsiao Chien Lin, Hsinchu, TW;
Chia-Tsung Tso, Hsinchu, TW;
Chih-Teng Liao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device having source and drain regions in a semiconductor substrate, a transistor including a gate electrode over the semiconductor substrate, an isolation structure in the semiconductor substrate adjacent to the transistor, a first inter-dielectric layer (ILD) material over the isolation structure, and a capacitor film stack over the first ILD material that includes an isolation plate over and covering a capacitor plate, and a contact to the capacitor plate.