The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Aug. 04, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tzuan-Horng Liu, Taoyuan, TW;

Hao-Yi Tsai, Hsinchu, TW;

Kuo-Lung Pan, Hsinchu, TW;

Tsung-Yuan Yu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/16 (2023.01);
U.S. Cl.
CPC ...
H01L 23/49833 (2013.01); H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/162 (2013.01); H01L 21/4853 (2013.01); H01L 2224/08235 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73251 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/37001 (2013.01);
Abstract

A semiconductor package includes a first tier and a second tier underlying the first tier and including TIVs and third dies. The first tier includes a first redistribution structure and first and second dies disposed side-by-side and separated by a first insulating encapsulation. A surface of the first insulating encapsulation, surfaces of first die connectors of the first die, and truncated spherical surfaces of second die connectors of the second die are level. The first redistribution structure underlies the surfaces of the first insulating encapsulation and the first die connectors and the truncated spherical surfaces of the second die connectors. The third dies disposed below the first redistribution structure are electrically coupled to the first die through the first redistribution structure and laterally covered by a second insulating encapsulation. The TIVs penetrate through the second insulating encapsulation and are electrically coupled to the second die through the first redistribution structure.


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