The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Aug. 03, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Eric Chih-Fang Liu, Albany, NY (US);

Christopher Cole, Albany, NY (US);

Steven Grzeskowiak, Albany, NY (US);

Katie Lutker-Lee, Albany, NY (US);

Xinghua Sun, Albany, NY (US);

Daniel Santos Rivera, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01);
Abstract

A method of processing a substrate that includes: forming recesses in a first mask layer over a mask stack including a lower hardmask, a middle mask, and an upper hardmask, the recesses defining an initial pattern including a plurality of spacer structures, each of the spacer structures having a first sidewall and an opposite second sidewall, the first sidewall having a different height from the second sidewall; etching the upper hardmask, selectively to the middle mask, to transfer the initial pattern to the upper hardmask; etching the middle mask, selectively to the lower hardmask and the patterned upper hardmask, to transfer a pattern of the patterned upper hardmask to the middle mask; and etching the lower hardmask, selectively to the patterned middle mask, to transfer a pattern of the patterned middle mask to the lower hardmask.


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