The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Oct. 21, 2021
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Thi-Thuy-Nga Nguyen, Aichi, JP;
Kenji Ishikawa, Aichi, JP;
Masaru Hori, Aichi, JP;
Kazunori Shinoda, Tokyo, JP;
Hirotaka Hamamura, Tokyo, JP;
Assignee:
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 2237/3341 (2013.01);
Abstract
A method for selective removal of a titanium aluminum carbide film against titanium aluminum nitride films by using near atmospheric pressure plasma that is a rich non-halogen radical source to produce various radicals (e.g. NH, H, CH, N, Ar, OH, O) from Ar and liquid vapor for film surface modification. The modified layer is able to form volatile products that can be easily removed by heating.