The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Jun. 12, 2024
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Hsing-Kuo Hsia, Jhubei, TW;

Kuo-Chiang Ting, Hsinchu, TW;

Jiun Yi Wu, Zhongli, TW;

Hung-Yi Kuo, Taipei, TW;

Shang-Yun Hou, Jubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2023.01); H01L 25/18 (2023.01); H10F 77/00 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/167 (2013.01); H01L 25/18 (2013.01); H10F 77/413 (2025.01); H10F 77/93 (2025.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 24/80 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/211 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract

A package includes silicon waveguides on a first side of an oxide layer; photonic devices on the first side of the oxide layer, wherein the photonic devices are coupled to the silicon waveguides; redistribution structures over the first side of the oxide layer, wherein the redistribution structures are electrically connected to the photonic devices; a hybrid interconnect structure on a second side of the oxide layer, wherein the hybrid interconnect structure includes a stack of silicon nitride waveguides that are separated by dielectric layers; and through vias extending through the hybrid interconnect structure and the oxide layer, wherein the through vias make physical and electrical connection to the redistribution structures.


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