The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
May. 13, 2021
Lam Research Corporation, Fremont, CA (US);
Jengyi Yu, San Ramon, CA (US);
Samantha S. H. Tan, Fremont, CA (US);
Yu Jiang, San Jose, CA (US);
Hui-Jung Wu, Pleasanton, CA (US);
Richard Wise, Los Gatos, CA (US);
Yang Pan, Los Altos, CA (US);
Nader Shamma, Cupertino, CA (US);
Boris Volosskiy, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemistry. In some implementations, a method of processing a semiconductor substrate starts by providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer. Next, openings are etched in the tin oxide layer using the patterned photoresist layer as a mask, and using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry. After the openings have been etched in the tin oxide layer, the photoresist layer is removed using an oxygen-based etch chemistry.