The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

May. 20, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Sheng-Hsiung Wang, Zhubei, TW;

Chun-Yen Lin, Hsinchu, TW;

Yen-Hung Lin, Hsinchu, TW;

Yuan-Te Hou, Hsinchu, TW;

Tung-Heng Hsieh, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); B82Y 10/00 (2011.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/822 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); H10D 62/115 (2025.01); H10D 84/856 (2025.01);
Abstract

A semiconductor structure includes a substrate; a first column of active regions over the substrate; a second column of active regions over the substrate; and a dummy padding disposed between the first and the second columns from a top view. The dummy padding includes multiple dummy regions. A first dummy region of the multiple dummy regions is disposed between a first active region in the first column of active regions and a second active region in the second column of active regions. An outer boundary line tracing an edge of the first active region, an edge of the first dummy region, and an edge of the second active region includes at least two substantially 90-degree bends from a top view. The first and the second active regions include a semiconductor material doped with a same dopant.


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