The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Feb. 25, 2022
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Chia-Yi Chiang, Hsinchu, TW;
Chien-Sheng Wu, Hsinchu, TW;
Chih-Hsien Hsu, Hsinchu, TW;
Chia-Hao Chang, Taichung, TW;
Tai-Pin Chuang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for etching a tungsten silicide (WSix) layer during formation of a gate electrode in an integrated circuit is disclosed. The method uses an etchant gas comprising nitrogen gas (N) and oxygen gas (O) in a specified flow ratio. The etchant gas may also comprise chlorine gas (Cl) and tetrafluoromethane (CF). The selectivity of the etchant gas containing Ofor WSix versus polysilicon is much higher, which reduces overetching and provides more control in methods for producing a gate electrode. A gate electrode produced by such a method is also disclosed.