The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Dec. 06, 2021
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Wenbing Yang, Campbell, CA (US);
Samantha Siamhwa Tan, Newark, CA (US);
Ran Lin, Fremont, CA (US);
Tamal Mukherjee, Fremont, CA (US);
Chunhong Zhou, Fremont, CA (US);
Xiaoyu Kang, Union City, CA (US);
Yang Pan, Los Altos, CA (US);
Hong Shih, Cupertino, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); B08B 3/04 (2006.01); B08B 3/08 (2006.01); B08B 9/08 (2006.01); C11D 7/08 (2006.01); C11D 7/10 (2006.01); C11D 7/32 (2006.01); C11D 7/50 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); B08B 3/08 (2013.01); B08B 9/08 (2013.01); C11D 7/08 (2013.01); C11D 7/10 (2013.01); C11D 7/3218 (2013.01); C11D 7/5013 (2013.01); C23C 16/4407 (2013.01); B08B 3/04 (2013.01); H01J 2237/022 (2013.01);
Abstract
A method of cleaning residue containing ruthenium (Ru) residue on at least one surface of a component of a semiconductor processing chamber is provided. The residue is exposed to a Ru cleaning composition comprising at least one of hypochlorite and Obased chemistries, wherein the Ru cleaning composition removes the Ru residue.