The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Jul. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Pin Chiu, Hsinchu, TW;

Zhen De Ma, New Taipei, TW;

Lee-Wen Hsu, Hsinchu, TW;

Liang-Wei Wang, Hsinchu County, TW;

Dian-Hau Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2831 (2013.01);
Abstract

A redistribution structure is provided. A redistribution structure according to the present disclosure includes a first dielectric layer, a mesh metal feature disposed in the first dielectric layer and including a base portion and a frame portion surrounding the base portion, a second dielectric layer disposed over the first dielectric layer and the mesh metal feature, a redistribution feature disposed over the second dielectric layer, a passivation structure disposed over the redistribution feature and the second dielectric layer, a pad opening extending through the passivation structure to expose a top surface of the redistribution feature. The redistribution feature includes a plurality of contact vias that extend through the second dielectric layer to land on the frame portion of the mesh metal feature.


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