The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

May. 16, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Su-Chun Yang, Hsinchu County, TW;

Jih-Churng Twu, Hsinchu County, TW;

Jiung Wu, Taoyuan, TW;

Chih-Hang Tung, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/498 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 21/561 (2013.01); H01L 23/291 (2013.01); H01L 23/293 (2013.01); H01L 23/3185 (2013.01); H01L 23/49816 (2013.01); H01L 23/49833 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/105 (2013.01); H01L 23/3142 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48228 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01);
Abstract

A die stacking structure, a semiconductor package and a method for forming the die stacking structure are provided. The die stacking structure includes a first device die; second device dies, bonded onto the first device die, and arranged side-by-side; and a stack of dielectric layers, extending in between the second device dies, and laterally enclosing each of the second device dies. The dielectric layers are respectively formed of a spin-on-glass (SOG) or a polymer, and a lower one of the dielectric layers has a thickness greater than a thickness of another one of the dielectric layers at a higher level.


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