The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Jan. 11, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Lin-Yu Huang, Hsinchu, TW;

Sheng-Tsung Wang, Hsinchu, TW;

Jia-Chuan You, Taoyuan, TW;

Chia-Hao Chang, Hsinchu, TW;

Tien-Lu Lin, Hsinchu, TW;

Yu-Ming Lin, Hsinchu, TW;

Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/02532 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H10D 30/6219 (2025.01); H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10D 62/151 (2025.01); H10D 64/01 (2025.01); H10D 64/015 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 84/013 (2025.01); H10D 84/0135 (2025.01); H10D 84/0158 (2025.01); H10D 84/834 (2025.01); H01L 21/02164 (2013.01); H01L 21/31116 (2013.01);
Abstract

Semiconductor device structures and method for forming the same are provided. The semiconductor device structure includes a substrate and a gate stack formed over the substrate. The semiconductor device structure further includes a source/drain structure formed adjacent to the gate stack and a contact structure vertically overlapping the source/drain structure. In addition, the contact structure has a first sidewall slopes downwardly from its top surface to its bottom surface, and an angle between the first sidewall and a bottom surface of the contact structure is smaller than 89.5°.


Find Patent Forward Citations

Loading…