The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Mar. 28, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
David Thomas, Richmond, VT (US);
Cody Soule, Burlington, VT (US);
John G. Twombly, Fairfax, VT (US);
Michael Brigham, Bolton, VT (US);
Bruce Porth, Jericho, VT (US);
Vivekanand Kalaparthi, Burlington, VT (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/53257 (2013.01);
Abstract
Structures for a through-silicon via and methods of forming a structure for a through-silicon via. The structure includes a substrate having a trench and surfaces that border the trench. The structure further includes a through-silicon via having a layer inside the trench. The layer is in direct contact with the surfaces of the substrate.