The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Aug. 17, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yoshiki Igarashi, Nirasaki, JP;

Satoru Kikushima, Hsin-chu, TW;

Takayuki Suga, Nirasaki, JP;

Jun Lin, Nirasaki, JP;

Chengya Chu, Hsin-chu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01L 21/31116 (2013.01);
Abstract

An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.


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