Hsin-chu, Taiwan

Satoru Kikushima


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023-2025

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2 patents (USPTO):Explore Patents

Title: Satoru Kikushima: Innovator in Etching Technology

Introduction

Satoru Kikushima is a notable inventor based in Hsin-chu, Taiwan. He has made significant contributions to the field of etching technology, particularly in methods that enhance the precision of material processing. With a total of 2 patents to his name, Kikushima's work is recognized for its innovative approach to etching materials containing silicon and oxygen.

Latest Patents

Kikushima's latest patents focus on an etching method and apparatus designed for selectively etching materials that contain silicon and oxygen. The etching method involves providing a substrate with the material in a chamber. It includes a two-phase process where a basic gas is supplied first, followed by a fluorine-containing gas. Notably, a portion of the second phase does not overlap with the first, allowing for effective heating and removal of reaction products generated during the process.

Career Highlights

Satoru Kikushima is currently employed at Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His role involves developing advanced etching techniques that are crucial for the production of high-quality semiconductor devices. His expertise in this area has positioned him as a key player in the field.

Collaborations

Kikushima has collaborated with several talented individuals in his field, including Yoshiki Igarashi and Takayuki Suga. These collaborations have fostered innovation and have contributed to the advancement of etching technologies.

Conclusion

Satoru Kikushima's contributions to etching technology demonstrate his commitment to innovation and excellence in the semiconductor industry. His patents reflect a deep understanding of material processing, making him a valuable asset to Tokyo Electron Limited and the broader field of technology.

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