The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
May. 20, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shang-Chieh Chien, Hsinchu, TW;
Tzu-Jung Pan, Hsinchu, TW;
Wei-Shin Cheng, Hsinchu, TW;
Cheng Hung Tsai, Hsinchu, TW;
Li-Jui Chen, Hsinchu, TW;
Heng-Hsin Liu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/7065 (2013.01); G03F 7/70033 (2013.01); G03F 7/7085 (2013.01); G03F 7/70025 (2013.01); G03F 7/70041 (2013.01);
Abstract
An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.