The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Apr. 26, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

An-Jhih Su, Taoyuan, TW;

Chia-Nan Yuan, Hsinchu, TW;

Shih-Guo Shen, New Taipei, TW;

Der-Chyang Yeh, Hsinchu, TW;

Yu-Hung Lin, Taichung, TW;

Ming Shih Yeh, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01L 23/00 (2006.01); H01S 5/0234 (2021.01); H01S 5/0237 (2021.01); H01S 5/026 (2006.01); H01S 5/028 (2006.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/323 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0203 (2013.01); H01L 24/16 (2013.01); H01S 5/0206 (2013.01); H01S 5/0217 (2013.01); H01S 5/0234 (2021.01); H01S 5/0237 (2021.01); H01S 5/026 (2013.01); H01S 5/0282 (2013.01); H01S 5/0421 (2013.01); H01S 5/04252 (2019.08); H01S 5/04256 (2019.08); H01S 5/3054 (2013.01); H01S 5/32316 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16503 (2013.01); H01S 5/04254 (2019.08); H01S 5/18305 (2013.01); H01S 5/18311 (2013.01); H01S 5/423 (2013.01); H01S 2301/176 (2013.01);
Abstract

In some embodiments, laser devices having contact pads are formed. The laser diodes are formed from a doped semiconductive material. The contact pads and semiconductive material share an ohmic junction. Underbump metallurgies are formed on the contact pads. Conductive connectors are electrically coupled to the laser devices. The underbump metallurgies help prevent metal inter-diffusion between the contact pads and conductive connectors. As such, when reflowing the conductive connectors, the junction of the contact pads and semiconductive material may retain its ohmic properties.


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