The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Jul. 27, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Lo-Heng Chang, Hsinchu, TW;

Kuo-Cheng Chiang, Hsinchu County, TW;

Zhi-Chang Lin, Hsinchu, TW;

Jung-Hung Chang, Changhua County, TW;

Shih-Cheng Chen, New Taipei, TW;

Shi-Ning Ju, Hsinchu, TW;

Chih-Hao Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H01L 23/528 (2006.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/5283 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/6219 (2025.01); H10D 64/017 (2025.01); H10D 84/0158 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01);
Abstract

Corner portions of a semiconductor fin are kept on the device while removing a semiconductor fin prior to forming a backside contact. The corner portions of the semiconductor fin protect source/drain regions from etchant during backside processing. The corner portions allow the source/drain features to be formed with a convex profile on the backside. The convex profile increases volume of the source/drain features, thus, improving device performance. The convex profile also increases processing window of backside contact recess formation.


Find Patent Forward Citations

Loading…