The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Aug. 26, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Wei Wu, Yilan County, TW;

Ying-Ching Shih, Hsinchu, TW;

Wen-Chih Chiou, Miaoli County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 23/3128 (2013.01); H01L 23/3157 (2013.01); H01L 23/49811 (2013.01); H01L 23/5383 (2013.01); H01L 23/5389 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/18 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/29 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29298 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01);
Abstract

A package structure including a semiconductor die, a redistribution circuit structure, a backside dielectric layer, conductive terminals, an electronic device, and an underfill is provided. The semiconductor die laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes redistribution conductive layers and thermal enhancement structures electrically insulated from the redistribution conductive layers, and the thermal enhancement structures are thermally coupled to the semiconductor die. The backside dielectric layer is disposed on the redistribution circuit structure. The conductive terminals penetrate through the backside dielectric layer. The electronic device is disposed over the backside dielectric layer and electrically connected to the redistribution circuit structure through the conductive terminals. The underfill is disposed between the backside dielectric layer and the electronic device, wherein the underfill is thermally coupled to the thermal enhancement structures.


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